SUD45P03-10 vishay siliconix document number: 70766 s-02596?rev. d, 21-nov-00 www.vishay.com 2-1 p-channel 30-v (d-s), 150 c mosfet
v ds (v) r ds(on) ( ) i d (a) a 0.010 @ v gs = ?10 v ?15 ?30 0.018 @ v gs = ?4.5 v ?12 to-252 s gd top view drain connected to tab order number: SUD45P03-10 s g d p-channel mosfet
parameter symbol limit unit drain-source voltage v ds ?30 gate-source voltage v gs 20 v t a = 25 c ?15 continuous drain current b t a = 100 c i d ?8 pulsed drain current i dm ?100 a continuous source current (diode conduction) i s ?15 t c = 25 c 70 maximum power dissipation b t a = 25 c p d 4 b w operating junction and storage temperature range t j , t stg ?55 to 150 c
parameter symbol typical maximum unit maximum junction-to-ambient b r thja 30 maximum junction-to-case r thjc 1.8 c/w notes a. calculated rating for t a = 25 c, for comparison purposes only. this cannot be used as continuous rating (see absolute maximum ratings and typical characteristics). b. surface mounted on fr4 board, t 10 sec.
SUD45P03-10 vishay siliconix www.vishay.com 2-2 document number: 70766 s-02596 ? rev. d, 21-nov-00 parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 30 gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = ? 30 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v, t j = 125 c ? 50 a v ds = ? 5 v, v gs = ? 10 v ? 50 on-state drain current a i d(on) v ds = ? 5 v, v gs = ? 4.5 v ? 20 a v gs = ? 10 v, i d = ? 15 a 0.010 drain-source on-state resistance a r ds(on) v gs = ? 10 v, i d = ? 15 a, t j = 125 c 0.015 ds(on) v gs = ? 4.5 v, i d = ? 15 a 0.018 forward transconductance a g fs v ds = ? 15 v, i d = ? 15 a 20 s dynamic b input capacitance c iss 6000 output capacitance c oss v gs = 0 v, v ds = ? 25 v, f = 1 mhz 1100 pf reverse transfer capacitance c rss 700 total gate charge c q g 90 150 gate-source charge c q gs v ds = ? 15 v, v gs = ? 10 v, i d = ? 45 a 20 nc gate-drain charge c q gd ds gs d 16 turn-on delay time c t d(on) 15 25 rise time c t r v dd = ? 15 v, r l = 0.33 375 550 turn-off delay time c t d(off) v dd = ? 15 v, r l = 0.33 i d ? 45 a, v gen = ? 10 v, r g = 2.4 100 200 ns fall time c t f 140 250 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage a v sd i f = ? 45 a, v gs = 0 v 1.0 1.5 v source-drain reverse recovery time t rr i f = ? 45 a, di/dt = 100 a/ s 55 100 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUD45P03-10 vishay siliconix document number: 70766 s-02596 ? rev. d, 21-nov-00 www.vishay.com 2-3 0 20 40 60 80 0 1020304050 0 2000 4000 6000 8000 0 5 10 15 20 25 30 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs 0 50 100 150 200 250 0246810 0 4 8 12 16 20 0 30 60 90 120 0.00 0.01 0.02 0.03 0.04 0.05 0 20406080100 0 20 40 60 80 100 012345 25 c ? 55 c 5 v t c = 125 c v ds = 15 v i d = 45 a v gs = 10, 9, 8, 7 v v gs = 10 v v gs = 4.5 v c rs s t c = ? 55 c 25 c 125 c 3 v c os s c iss i d ? drain current (a) 4 v 6 v
SUD45P03-10 vishay siliconix www.vishay.com 2-4 document number: 70766 s-02596 ? rev. d, 21-nov-00 on-resistance vs. junction temperature source-drain diode forward voltage (normalized) ? on-resistance ( t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) r ds(on) ) ? source current (a) i s 0.0 0.4 0.8 1.2 1.6 2.0 ? 50 ? 25 0 25 50 75 100 125 150 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 45 a t j = 25 c t j = 150 c 0
0 4 8 12 16 20 0 25 50 75 100 125 150 safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 500 10 0.1 0.1 1 10 100 limited by r ds(on) 1 100 t a = 25 c single pulse normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 normalized effective transient thermal impedance maximum drain current vs. ambiemt temperature t a ? ambient temperature ( c) ? drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 ms 10 ms 100 ms dc 10, 100 s 1 s 500 100
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